The CEA and Renault Group R&D teams have combined their expertise in the field of on-board power electronics, in particular in the field of wide band-gap semiconductor materials, whether in Gallium Nitride (GaN) or Silicon Carbide (SiC).

As a result, the new architecture based on the wide band-gap semiconductor materials makes it possible to reduce energy losses by 30% during conversion, and to reduce heating by the same amount, making it easier to cool the conversion system.